【摘要】 报道了我们研制出的132元InSb光伏线列的制备工艺及其性能。线列是采用流行的Cd扩散工艺和光刻剥离技术制成的,每个线列装于封离的检测杜瓦瓶中,77K,线列典型检测元的探测率D^*（500,1000,1）为（0.8～1.5）×10¹⁰cm·Hz^1/2/W。更多还原

【Abstract】 132 clement photovoltaic InSb linear arrays have been prepared successfully by diffusing Cd into n-type InSb wafers and photolithography lift away technique. The array is mounted in a sealed off test dewar, the detectivities D^*（500, 1000, 1） obtained from measuring on typical elements of the arrays at 77K are in the range of （0.8～1.5）× 10¹⁰cmHz（1/2）/W.更多还原