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自集成透镜InGaAsP/InPDHLED及其离子束铣技术
A novel integral lensed InGaAsP/InP DH LED and ion-beam milling technigue
【摘要】 本文报道在国内首次采用离子束铣技术研制自集成透镜InGaAsP/InP DH LED的实验结果。采用烘烤正性光致抗蚀剂来形成球状掩膜适合于离子束铣,且重复性很好。为了获得光洁的刻蚀表面,刻蚀条件均已最优化。
【Abstract】 We report the results of fabrication of integral lensed GaInAsP LED by using ion-beam milling technigue firstty in China. Baking a positive acting photoresist layer was found to facilitate a very reproducible method of forming a spherical mask suitable for ion-beam milling. Characteristics of Ar ion-beam milling of InP and mask was studied, and milling parameters are optimized for obtaining optically smooth etched surfaces.
- 【文献出处】 光学学报 ,Acta Optica Sinica , 编辑部邮箱 ,1991年01期
- 【被引频次】1
- 【下载频次】22