【摘要】 采用氧离子注入在p型(Be)-GaAs层中形成高阻层.根据I—V测量,光致发光测量,以及TEM方法观察的结果,得知载流子补偿主要与氧注入引入的损伤相关.当退火温度高于600℃时,由于损伤的恢复,所形成的高阻层开始向原来p型层转变.由于铍与氧的相互作用,高温退火将促进二次缺陷的形成与长大,使铍、氧共注入层的导电状态难以恢复到来注氧时的导电状态.更多还原

【Abstract】 High resistivity regions in Be-doped GaAs can be produced by the implantation of O+. From the result; of I-V measurement, photoluminescence and TEM. it is thought that the carriers are compensated mainly by damage-related deep levels. Because of the interaction of Be and O, annealing at the temperature higher than 600℃ produces more macroscopic damages (dislocation and stacking faults) and the original conduction is hard to be restored.更多还原