【摘要】 本文提出了一种制作HBT采用的垂直台面结构自对准工艺.利用该工艺及对A1GaAs/GaAs具有高选择比的化学湿法腐蚀剂,已研制成微波HBT.发射区台面与基极电极间隙为0.1μm,最大直流电流增益为40,截止频率f_T为10GHz.更多还原

【Abstract】 A HBT self-aligned technology with a perpendicular side-wall mesa has been proposed. By virtue of a chemical wet etchant with high selectivity, microwave HBT has been fabricated. The gap leb between the emitter mesa edge and base contact is aboat 0.1μm. The transistor shows a current gain of 40 with fT of 10.0GHz.更多还原