【摘要】 本文利用多种实验手段,包括OTCS,DLTS,低温PL等,对影响LEC SI-GaAs单晶电学性质热不稳定的可能因素进行了系统研究.在仔细分析对比文献发表的实验结果的基础上,提出了普遍成立的多能级电学补偿模型.这个模型不但能成功地对SI-GaAs单晶热不稳定的本质进行合理解释,而且还为研制高热稳定的GaAs材料提供了科学依据.更多还原

【Abstract】 The effects of all possible factors on thermal unstability of LEC SI-GaAs materials subject to heat-treatment have been systematically studied by using various techniques such as OTCS, DLTS and low temperature PL etc. On the basis of carefully analysing our and published experimental results, a new compensation model is presented in which five-level has been taken into account. This model can be used not only to successfully explain all phenomena related to conductivity of GaAs crystals, but also to provide a clue of improving the quality of this material.更多还原