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Ga(1-x)Al_xAs/GaAs量子阱束缚能级的计算
The Calculation of Quantum Well Bond Energy for Gai1-xAlxAs/GaAs Material
【摘要】 本文对于Ga1-xAlxAs/GaAs单量子阱系统,利用电子在势阱作用中的柱对称性,建立了平面类氢原子与直线类氢原子复合量子阱模型。所求施主能级,在极限情况下,与已知的精确解一致,在势阱深度Vo有限,宽度L不为零的条件下,对X=0.1和X=0.4,分别计算了基态束缚能,其结果与实验较为接近。
【Abstract】 A model of complex quantum well for plane-similar Hydrogen atoms and a straight-line-similar Hydrogen atoms is built by means of column symmetry of electrons in the operation of the potertial well. It is in agreement with known exact solutions within the limit. The basic state bond energy is calculated under the conditions that the depth of the potiential well Vo is defined and the width L is not zero for x=0. 1, x = 0. 4. The results of calcuation are quite similar to those of experiment.
- 【文献出处】 甘肃科学(甘肃省科学院学报) , 编辑部邮箱 ,1991年01期
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