【摘要】 本文报道了半导体InP上Al膜阳极氧化的研究,并用AES,V-V,DLTS和椭圆仪等测试方法研究了氧化膜的稳定性、电学特性、组分的纵向分布以及Al₂O₃/InP的界面特性,研究结果表明,阳极氧化Al₂O₃的介电常数为11～12,Al₂O₃/InP界面存在一个能量上连续分布的电子陷阱,DLTS峰值对应的能级位置约在E_c-E_c=0.5eV,其俘获截面约为10^-15cm²,Al₂O₃/InP的界面态密度为10¹¹cm^-2eV^-1。阳极氧化Al₂O₃的稳定性要比InP自身氧化物好得多,更适于用作器件的钝化保护和扩散掩蔽膜。更多还原

【Abstract】 The anodization of Al film on InP substrate and the properties of anodic Al2O3/lnP have been investigated by AES, DLTS, I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has the permitivity of 11-12 and the resistivity of 1.3×10¹³ ohm-cm. Interface state density at Al2O3/InP is about 10¹¹cm-2·eV-1. DLTS reveals that there is continuously-distributed interface electron traps at Al2O3/lnP interface. Anodic oxide Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator etc.更多还原