节点文献
双向负阻晶体管动态伏安特性的实验研究
STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT
【摘要】 本文研究了双向负阻晶体管(Bidirectional Negative Resistance Transistor,简称BNRT)在张弛振荡电路中的动态伏安特性。借助动态伏安特性对BNRT张弛振荡电路的一些性质进行了分析。实验结果与计算结果一致。本文还对改进器件结构的设计,以便使器件达到更高的振荡频率提供了理论依据。
【Abstract】 Experimental investigation was carried out for the dynamic I-V characteris-tics of the bidirectional negative resistance transistor (BNRT) in the relaxation oscillation circuit. Some properties of the BNRT relaxation oscillation circuit were also analysed by means of the dynamic I-V characteristics. Experimental results agree with the computations. The direction for improving the device design is also pointed out in order to enhance the oscillation frequency.
【关键词】 半导体器件;
负阻器件;
张弛振荡器;
【Key words】 Semiconductor devices; Negative resistance device; Relaxation oscillator;
【Key words】 Semiconductor devices; Negative resistance device; Relaxation oscillator;
- 【文献出处】 电子科学学刊 , 编辑部邮箱 ,1991年03期
- 【被引频次】1
- 【下载频次】43