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双向负阻晶体管动态伏安特性的实验研究

STUDY ON THE DYNAMIC I-V CHARACTERISTICS OF BNRT

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【作者】 周旋高广和

【Author】 Zhou Xuan(Institute of Semiconductors, Academia Sinica, Beijing)Gao Guanghe(Beijing Graduate School of North China Institute of Electric Power, Beijing)

【机构】 中国科学院半导体研究所华北电力学院研究生院 北京北京

【摘要】 本文研究了双向负阻晶体管(Bidirectional Negative Resistance Transistor,简称BNRT)在张弛振荡电路中的动态伏安特性。借助动态伏安特性对BNRT张弛振荡电路的一些性质进行了分析。实验结果与计算结果一致。本文还对改进器件结构的设计,以便使器件达到更高的振荡频率提供了理论依据。

【Abstract】 Experimental investigation was carried out for the dynamic I-V characteris-tics of the bidirectional negative resistance transistor (BNRT) in the relaxation oscillation circuit. Some properties of the BNRT relaxation oscillation circuit were also analysed by means of the dynamic I-V characteristics. Experimental results agree with the computations. The direction for improving the device design is also pointed out in order to enhance the oscillation frequency.

  • 【被引频次】1
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