【摘要】 Ⅱ-Ⅵ族化合物半导体ZnTe在Ar~+离子轰击下产生严重的辐照损伤,辐照产生的缺陷可在电子束的照射下部分回复。回复过程受入射电子束能量(80KeV-200KeV)的影响不大。入射电子束剂量增大,回复温度升高,则回复过程加快。这一电子束诱导的回复现象可用非辐射复合增强缺陷反应的机制解释**更多还原

【Abstract】 Heavy irradiation damage occurs in Ⅱ-Ⅵ semiconductor compound ZnTe under the bombardment of Ar~+ion. These irradiation defects can be partially recovered under the electron beam irradiation. The recovery process is less sensitive to the electron energy (80keV—200keV). With the increase of the electron radiation dose and the raising of the temperature, the recovery process accelerates. This phenomenon of the electron induced recovery may be explained in terms of the mechanism of non—radiative recombination enhanced defects reaction.更多还原