【摘要】 本文介绍利用环形双电子枪制备非晶硅太阳电池用ITO/SnO₂双层透明导电膜新工艺。在最佳条件下制备的该膜的薄层电阻达6.1Ω/□,可见光范围的透过率大于90％,载流子浓度为1.0×10²¹cm^-3。实验表明,当膜层厚为200～300A时,就可有效阻挡ITO膜中的In向a-Si:H中扩散。更多还原

【Abstract】 This paper presents the new technology in preparing double layered transparent conductive films of ITO/SnO2 in non-crystalline silicon solar cell by use of ring-shaped double electron beam evaporation method. The surface resistance of such film prepared under optimal technological condition amounts to 6.1Ω/□. The film has a transmittance over 90% of visible light, and a carrier density up to 1.0×1021 cm-3. Diffusion of In in ITO to a-Si:H can be effectively suppressed with SnO2 layer of 200-300 A in thickness.更多还原