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基片温度对非晶碳硅薄膜电导的影响
THE INFLUENCE OF SUBSTRATE TEMPERATURE ON CONDUCTANCE OF AMORPHOUS CARBONE-SILICON THIN FILMS
【摘要】 在基片加热的条件下,高纯硅靶在甲烷和氩的混合气氛中,采用直流平面磁控反应溅射,可以制备具有光电响应的氢化非晶碳硅合金薄膜。本文对不同基片温度下成膜的样品进行了电导性能测试并分析了测试结果,得出了基片温度是影响该薄膜光电导的关键因素的结论。
【Abstract】 In the conduction of substrates heated,the hydroamorphous carbone-siliconalloy thin films that are prepared by the DC planar magnetron reactire sputtering of high puresilicon target in gas mixture of argon and methane have a photoelectronic response.Theconductance properties of the thin films prespared at different substrate temperature aremeasured and analyzed.The measuring and analytical results show that the substrate tempe-rature is a key factor of the influence on photoconductance.
【关键词】 基片温度;
非晶碳硅薄膜;
暗电导率;
光电导率;
相对光电导;
【Key words】 substrate temperature; amorphous carbone-silicon thin film; dark conductance; photoconductirity; relative photoconductance;
【Key words】 substrate temperature; amorphous carbone-silicon thin film; dark conductance; photoconductirity; relative photoconductance;
【基金】 机电部军事预研基金
- 【文献出处】 电子科技大学学报 ,Journal of University of Electronic Science and Technology of China , 编辑部邮箱 ,1991年04期
- 【分类号】TN304.055;TN305
- 【下载频次】38