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电沉积CdTe半导体薄膜中Cd和Te含量的极谱分析

POLAROGRAPHIC DETERMINATION OF Cd AND Te IN ELECTRODEPOSITED CdTe THIN FILMS

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【作者】 郭也平邓薰南张红青

【Author】 GUO Yeping DENG Xunnan ZHANG Hongqing (Shanghai University of Science and Technology)

【机构】 上海科学技术大学技术大学化学系上海科学技术大学上海科学技术大学

【摘要】 用极谱法分析电沉积 CdTe 半导体薄膜中 Cd 和 Te 的含量随电沉积电位、沉积温度和热处理温度的变化,获得 Cd 和 Te 原子数之比几乎为1∶1的 CdTe 薄膜。热处理能改变 CdTe 薄膜的导电类型。

【Abstract】 The variations on composition of electrodeposited CdTe thin films withcathodic potentials,electrolyte temperatures and heat treatment temperatures were studiedby using polarographic method.The CdTe thin films where the Cd/Te atomic ratio equalunity was obtained at a potential about-0.6V vs SCE and electrolyte temperature below50℃.The change of semiconductivity of the CdTe films was observed by heat treatment.While p-CdTe films were favourably prepared at temperature lower than 300℃,n-CdTefilms were obtained only above 350℃.

【关键词】 极谱分析CdTe 薄膜电沉积
【Key words】 polarographic analysisCdTe thin filmselectrodeposit
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