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GaAs(100)面硫钝化的HREELS与XPS研究

Study of HREELS and XPS on Sulfide Passivated GaAs (100) Surface

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【Author】 Zhu Jianhong/Surface Physics Laboratory, Fudan University,Shanghai,200433Hou Xiaoyuan/Surface Physics Laboratory, Fudan University,Shanghai,200433Ding Xunmin/Surface Physics Laboratory, Fudan University,Shanghai,200433Jin Xiaofeng/Surface Physics Laboratory, Fudan University,Shanghai,200433Chen Ping/Surface Physics Laboratory, Fudan University,Shanghai,200433

【机构】复旦大学应用表面物理国家重点实验室；复旦大学应用表面物理国家重点实验室上海200433；上海200433；上海200433；

【摘要】用高分辨电子能量损失谱（HREELS）结合XPS研究了硫钝化的GaAs（100）面.HREELS的结果与XPS一致,证明钝化后GaAs（100）面的自然氧化物被完全除去,样品表面形成了一层主要由As-S键构成的钝化层.钝化样品表面的沾污主要是H₂O与碳氢化合物.在钝化前增加样品在浓HC1中浸泡的处理,能使沾污物在真空退火后被彻底除去.更多还原

【Abstract】 High resolution electron energy loss spectroscopy (HREELS) combined with XPS is usedto study sulfide passivated GaAs (100)surface.The result of HREELS, which is consistentwith that of XPS, has proved that after passivation the native oxide of GaAs (100) surface iscompletely removed and a passivation layer mainly composed of As-S bonds is formed on thesample surface.The main contaminations of the passivated surface are water and hydrocarbons.An additional treatment of soaking the sample in concentrated HCl prior to the passivationleads to complete removal of the contaminations after vaccum annealing.更多还原

【关键词】沾污物；电子能量损失谱； HREELS； XPS；真空退火；界面态密度；氧化层；成键；芯态；费米能级；

【基金】国家自然科学基金

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1991年12期

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