【摘要】 本文利用迫近递推法（ATM）,用准静态近似,以较高的精度模拟实际的带边形状,自治地计算了中等强度电场下,第Ⅰ类 GaAs/Ga_0.7Al_0.3As半导体多量子阱的载流子能级和波函数,并由此计算了多阱系光跃迁的吸收系数.结果表明,正如Bleuse等用紧束缚模型所预言的,电场导致了能级的等间距分布,载流子波函数的局域化以及对应于不同能级的波函数之间的平移关系.本文的方法可用于计算有复杂形状带边的半导体异质结构的载流子性质.更多还原

【Abstract】 By using the asymptotic transfer method （ATM） in the quasistationary state approxima-tion, the energy levels and wave functions of carriers in a moderate eletric field are calculatedself-consistently for type-IGaAs/Ga_0.7Al_0.3Assemiconductor multiple quantum wells. On thisbasis, the optical absorption coefficient is calculated and analysed.As predictel by J. Bleuseet al.,our results show that the eletric field causes the energy level evenly spaced, the wavefunctions localized and the displacement relation between the wave functions corresponding todifferent energy levels.The method used here is universal and can be used to deal with the pro-perties of semiconductor heterostructures in which there is complex potential profile.更多还原