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间接耦合光电探测结构的光致负阻特性

Characteristics of Photonegative Resistance in Indirect Coupling Photodetecting Structure

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【Author】 He Mincai/Department of Physics, Wuhan University, Wuhan,430072Zhong Zhe/Department of Physics, Wuhan University, Wuhan,430072Chen Bingruo/Department of Physics, Wuhan University, Wuhan,430072Huang Qijun/Department of Physics, Wuhan University, Wuhan,430072Chen Changsheng/Department of Physics, Wuhan University, Wuhan,430072Long Li/Department of Physics, Wuhan University, Wuhan,430072Yang Huidong/Department of Physics, Wuhan University, Wuhan,430072Cai Benlan/Department of Physics, Wuhan University, Wuhan,430072

【机构】武汉大学物理系；武汉大学物理系 430072； 430072； 430072；

【摘要】本文报道了间接耦合光电探测结构所产生的光致负阻现象及初步实验结果.更多还原

【Abstract】 In this paper, the negative resistance exeted by light in an indirect coupling photodetec-tor and some of experimental results are reported.更多还原

【关键词】光电探测；负阻特性；初步实验结果；谷电；基区；光强；集电结；发射结；集电区；峰电流；

【基金】湖北省科委基金

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1991年10期

【被引频次】21
【下载频次】32

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