【摘要】 本文研究了在用氢等离子体原位清洁硅片表面过程中,衬底温度,等离子体能量,处理时间及退火工艺对衬底表面清洁及晶格损伤的影响.实验结果表明,较高的衬底温度,较低的等离子能量有利于得到高度清洁、晶格损伤可恢复完整的硅表面.衬底温度为室温时的等离子体处理对硅表面会引入不可恢复的永久性损伤(缺陷);等离子体处理后的退火对于恢复晶格完整是极其必要的.完善的等离子体清洁处理之后,在1000℃下利用硅烷减压外延生长的外延层中,层错密度和位错密度分别小于50个/厘米~2和 1×10~3个/厘米~2.更多还原

【Abstract】 Hydrogen plasma in-situ cleaning of silicon surface is studied by examining the effect ofvarious operating conditions （substrate temperature, plasma energy, treatment time and annea-ling） on contamination and lattice damage.The results show that a higher substrate tempera-ture and a lower plasma energy are favourable to efficient cleaning of the silicon surface onwhich the lattice damage is curable.Surface treatiement by H-plasma at room temperaturemay result in permanent damages （defects）. An annealing process after H-plasma treatment isnecessary for recovering the lattice perfection. On a treated substrate, an epitaxial film wasdeposited by reduced pressuue process of SiH₄ at 1000℃. The densities of stacking-faults anddislocations are less than 50/cm² and 500/cm², respectively.更多还原