【摘要】 利用变温FTIR测量和变温Hall效应测量方法,探讨了在室温（RT）至475℃温度范围内,硅中9μm峰的中心位置及其红外吸收系数随温度变化的规律.实验证实了氧在硅单晶中存在二种不同的组态:在RT—325℃范围内为Si₂O组态,其束缚能为E_b～0.8—1.0eV;在325—475℃范围内,Si₂O组态和准自由间隙氧原子组态同时并存,准自由氧原子扩散所须克服硅晶格的势垒为E_L～1.5—1.6eV.由此很好地解释了硅中氧的热扩散行为.更多还原

【Abstract】 The central position and the absorption coefficient of 9μm band of Si samples are studiedih the temperature range from RT to 475℃ by FTIR spectrometry and Hall coefficient tech-niques.Experimental results show that there exist two kinds of oxygen configuration in sili-con: In the temperature range fran RT to 325℃, the oxygen atoms are kept as bonded Si₂Oconfiguration with a binding energy of E_b～0.8-1.0 eV;In the temperature range from 325to 475℃, the bonded Si₂O configuration and the quasi free interstitial oxygen configuration coe-xist.The lattice barrier E_L is～1.5-1.6 eV.更多还原