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高温工艺对TiSi₂/n⁺-Poly-Si复合栅MOS电容特性及TiSi₂膜性质的影响

Effects of High Temperature Process on Characteristics of TiSi₂/Poly-Si MOS Capacitor and TiSi₂ Films

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【Author】 Tao Jiang/Institute of Microelectronics,Peking University, Beijing, 100871Wu Guoying/Institute of Microelectronics,Peking University, Beijing, 100871Zhang Guobing/Institute of Microelectronics,Peking University, Beijing, 100871Chen Wenru/Institute of Microelectronics,Peking University, Beijing, 100871Wang Yangyuan/Institute of Microelectronics,Peking University, Beijing, 100871

【机构】北京大学微电子学研究所；北京大学微电子学研究所北京100871；北京100871；北京100871；

【摘要】本文研究了高温退火过程对TiSi₂/n⁺-POly-Si 复合栅MOS电容电学性能及TiSi₂膜特性的影响.结果表明,当炉退火温度高于900℃时,TiSi₂层厚度变的不均匀,甚至在某些地方不连续;TiSi₂/n⁺Poly-Si 界面十分不平整;多晶硅中杂质外扩散十分严重; MOS电容的性能和电学参数变差.对于RTA过程,高温退火对MOS电容的电学特性没有产生不利影响,TiSi₂膜仍很均匀.所以,在 TiSi₂/Poly-Si复合栅结构工艺中,高温退火过程最好采用 RTA技术.更多还原

【Abstract】 Thermal stability of TiSi₂ on polycrystalline silicon is investigated by cross-sectional tr-ansmission electron microscopy.The results show that when the additional furnace annealingtemperature is higher than 900℃, discontinuity of TiSi₂ film, and a penetration of TiSi₂ intopolycrystalline silicon layer occur,causing a rough TiSi₂/poly-Si interface.The electricalproperty of TiSi₂/poly-Si polycide MOS capacitor is worse than that of poly-Si gate MOS ca-pacitor.While for high temperature RTA process,no unfavorable effects are observed.更多还原