【摘要】 本文对于新型的负电子微分迁移率场效应管内部的电位、沿沟道方向的电场以及载流子浓度的稳态分布进行了二维数值模拟,结果表明通过适当选取器件尺寸、掺杂分布以及偏置电压,沿沟道方向可以产生一个处于负电子微分迁移率范围之内的均匀电场,使沟道具有负RC效应而不出现高场畴.更多还原

【Abstract】 The distributions of the potential,the electric field along the channel and the carrier con-centration in a noval negative eletron differential mobility FET’s are studied by two-dimension-al numerical simulation.The results of calculation indicate that it is possible in producing auniform electric field along the channel in the range of negative electron differential mobi-lity by properly choosing the dimension of the device,the distributio. of the doping impuri-ty and D.C. bias.The channel electric field is so controled that the -RC effect will existbut no domain will be formed.更多还原