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Si3N4膜pH-ISFET输出特性研究

Output Characteristics of pH-ISFET with Si3N4 as Ion Sensitive Film

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【作者】 虞惇; 魏亚东; 王贵华;

【Author】 Yu Dun/Harbin Institute of Technology, Harbin, 150006Wei Yadong/Harbin Institute of Technology, Harbin, 150006Wang Guihua/Harbin Institute of Technology, Harbin, 150006

【机构】 哈尔滨工业大学; 哈尔滨工业大学 哈尔滨150006; 哈尔滨150006; 哈尔滨150006;

【摘要】 通过对 pH-ISFET的长时间测量,发现器件的输出偏离 Nernst方程.提出了器件输出由快响应、慢响应和时漂三部分组成,以及器件响应与时漂数据的提取方法.证明了快慢响应的共同作用符合Nernst方程,慢响应的响应幅度小,长达数小时之久.在响应初期观察到的器件漂移,主要是慢响应造成的.

【Abstract】 The output characteristics of a pH-ISFET deviate from the Nernst equation after long-time measurement. To explain such a deviation, it is proposed that the device output consistsof fast response, slow response and drift. Based on the proposed method to separate the de-vice response and drift from the device output, the common contribution of both responses isin good agreement with Nernst equation.The slow response of the device, which is only asmall part of the total response lasts for several hours.The output instability of a pH-ISFETduring the initial period after the change of pH solution is mainly due to the slow response.

【基金】 国家自然科学基金
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1991年04期
  • 【被引频次】4
  • 【下载频次】33
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