【摘要】 淀积在SiO₂上的共溅射W-Si 薄膜,在高纯N₂中经200—1100℃的10秒钟快速热退火,用转靶X射线衍射、激光喇曼光谱、俄歇电子能谱、扫描电子显微镜、透射电子显微镜、四探针测量等不同手段研究了钨硅化物的形成.565℃退火出现了W₅Si₃相,退火温度高于755℃,稳定相WSi₂形成,但W₅Si₃相并不消失,一直与WSi₂共存.经考查,W₅Si₃的存在并不是由于在薄膜淀积或是退火形成硅化物的过程中引起缺硅而造成的,它对薄层电阻仅起部分影响作用,材料的电学性质最终仍由具有最低电阻率的稳态WSi₂相决定。WSi₂与W₅Si₃相高温热氧化时都不稳定,会分解并被氧化成SiO₂和WO₃。更多还原

【Abstract】 Cosputtered W-Si films on SiO₂ were rapidly thermally annealed in high purity N₂ at tem-peratures ranging from 200 to 1100℃ for 10 s.Formation of tungsten silicide has been studiedby means of XRD, Raman Scattering,AES, SEM, TEM and four-point probe measurment.W₅Si₃ phase appears in films annealed at 565℃. When the annealing temperature is higher than755℃, stable phase WSi₂ is formed,but W₅Si₃ does not disappear,all along coexists withWSi₂.Experiments show that the existance of W₅Si₃ is not cause from lack of silicon duringfilm deposition and annealing to form silicide.W₅Si₃ contributes only partly to the sheet lesi-stance,the electric properity of material is controlled by stable WSi₂ phase with minimal resi-stivity.WSi₂ and W₅Si₃ phases are not stable at high temperature oxidation,they react to formSiO₂ and WO₃.更多还原