【摘要】 本文用 DLTS 和瞬态单电容技术研究了液相外延生长的 GaAlAs/GaAs 有源层掺 Si 器件的深能级,用红外显微镜测量了近场 EL 图像,研究了深能级及暗结构缺陷对器件的影响及它们间的关系。更多还原

【Abstract】 The deep level in the n-Ga_0.95Al_0.05As active layer of GaAlAs/GaAs double-heterostructure light-emitting diode is studied by using DLTS and single shot transient capacitance methods.The GaAlAs/GaAs DH wafers have been grown by LPE technique.EL pattern of GaAlAs/GaAs DH LEDs has been observed with an infra- red scanning microscope.The effects of the deep level and dark spot defects on the characteristics of the GaAlAs/GaAs DH LEDs are investigated.The relation between the deep level and dark spot defects in LEDs is discussed.更多还原