【摘要】 我们研制了用于薄膜工艺的宽束离子源.该源能提供20～3000cV,束流强度最大达100mA 的宽离子束,可根据不同工艺要求,产生均匀束、会聚束及球状发散束等不同束形,并按不同的引出束能量,采用三栅、双栅或单栅引出系统.其最大气耗量为1.2Pa·m³/s,放电室工作气压1.33×10^-2Pa(10^-4Torr 量级),可用 N₂、O₂、Ar 及 CH₄等工质工作.它已在离子束溅射镀膜、离子束直接淀积成膜及离子束辅助镀膜工艺得到了应用.证明其性能良好,稳定可靠.本文论述源的工作原理、结构、工作特性及多功能引出系统,并讨论了放电稳定性及薄膜工艺对离子源的要求.更多还原

【Abstract】 An axial ficld broad-beam ion source is developed.A broad ion beam of 20～3000cVand maximum beam current of 100mA can be extracted by the sourcc.Three shapes ofbeams i.e.uniform,convergent and spherically-divergent beams.According to the variousbeam-extracted energy,triple,double and sigle-grid are used for various extraction sys-tems,respectively.Its maximum gas-consumption is 1.2 Pa.m³/s,and The operationalpressure is 1.33×10^-2Pa in the discharge chamber.It can operate with a variety of gases,such as N₂,O₂,Ar and CH₄,etc.The source is applied to ion beam sputtering deposition,ion beam direct-deposition and ion boam-assisted deposition.It shows that its perform-ance,stability and reliability direct-deposition ars completely satisfied for the requirementof thin film technology.更多还原