【摘要】 硅片直接键合技术是制备SOI材料的有效途径,其关键工艺是对SiO₂表面进行活化处理。本文报道用 AES、XPS 和 IR 分析研究不同条件氧等离子体处理对 SiO₂表面结构和性质的影响。结果表明,SiO₂经氧等离子体处理后,活性氧和电子破坏了硅氧桥结构,导致表面活化,易于吸附OH^-和 H⁺离子,表面腐蚀速度增大。用处理后的硅片实现了不加压的键合,获得了性能优良的 SOI材料。更多还原

【Abstract】 SBD is an effective method to prepare SOImaterials.The key of this method is the activa-ting treatment of SiO₂ surface.In this paper,theeffect of O₂ plasma treatment on SiO₂ surfacestructure and properties at different conditionswere investigated with AES.XPS and IR ana-lyses.It is shown that after O₂ plasma treatmentof SiO₂ surface,active oxygen and electrons des-troy silicon-oxygen bridging structure（（?）Si-O-Si（?））,which results in a lot of dangling bonds on surface.The surface layer easily absorbs OH^- and H⁺ ionschemically,and its etch rate is increased.Si wa-fer direct bonding is sucessfully done withoutexternal pressure on it using treated Si wafersand SOI materials with superior （?）roperties can beobtained.更多还原