【摘要】 用高分辨率沟道背散射技术研究了低能N离子注入单晶硅形成氮化硅的过程。测出了N和位移Si原子的深度分布。提出在N离子注入时同时存在着三个过程——注入、溅射和释放。由此建立了一个微分方程描写样品中剩余N的浓度变化,并讨论了氮化硅形成机制。更多还原

【Abstract】 Low energy ion beam nitridation of silicon has been investigated by high resolution channeling-backscattering technique. The profiles of nitrogen and displaced silicon atoms are obtained, During the bombardment, all the three processes of implanting, sputtering and releasing exist. A differential equation is deduced and the mechanism of formation of silicon nitride is discussed.更多还原