【摘要】 本文提出一种统计数值模拟法,从理论上较严格地研究自发辐射的量子涨落引起的半导体激光相位涨落积累量和模式线宽。结果在单模情况与小信号解析近似的结果一致;在近单模情况,边模使主模线宽略有增加;指出最近有人用Monte-Carlo法对此得出过高估计的原因,并对小讯号解析近似已不适用的次模线宽得出其与功率无关的线宽分量约为100MHz,与实验一致。更多还原

【Abstract】 A statistical numerical simulation method is proposed, and by which the accumulation of phase fluctuation and the spectral linewidth in semiconductor lasers are investigated theoretically. In the case of single mode, the result is quite in agreement with that by small signal approximation instead of being its 4 times. In the case of nearly single mode, the linewidth of the main mode is increased somewhat but not too seriously by the side mode. The overestimation and its cause of the results obtained by a Monte Carlo method used by other author recently is noted, and a power independent linewidth component of the side mode of the order of 100 MHz agreed with experiment is obtained where the small signal approximation is not applicable.更多还原