【摘要】 本文研究了MeV高能B~+离子注入Si中二次缺陷的退火行为。提出一种新型的双重注入退火方法,抑制或消除了MeV高能B~+离子注入Si样品中的二次缺陷。还对这种二次缺陷的被抑制与被消除的物理机制进行了讨论。更多还原

【Abstract】 Thermal annealing behavior of secondary defects in silicon implanted with MeV energetic boron ions has been studied. We snggest a new type of enhanced annealing effect of donble implantation, which can be used effectively to suppress or eliminate the secondary defects in such implanted silicon samples. The physical mechanism of the suppression and elimination processes is discussed.更多还原