【摘要】 a-Si pin太阳电池暗态下存在一种串联电阻效应,并呈非线性特性。由于它的存在,使暗态电流对数值与电压之间明显偏离线性关系。该非线性电阻在高正向电压下趋于饱和,呈现集总电阻效应。从不同光强下电池串联电阻R_s和短路电流I_sc关系推算出的接触电阻值与上述非线性电阻的饱和值相符甚好,说明此电阻效应可能与接触特性有关。 计入非线性电阻后标出的暗态二极管参数（品质因子n、反向饱和电流I_o）与光态二极管参数(n_L、I_oL)非常接近,在一定程度上由暗态I—V特性算出的V_oc与实测值一致性很好。因此认为,可由暗态I—V特性评估电池性能。更多还原

【Abstract】 A series resistance effect in a-Si:H solar cells under dark condition is discovered by analyzing the dark I-V curve carefully.Tne series resistance presents a non-linear characteristics with the effect dependent on dark current logarithm of voltage deviates from linear relation. The non-linear resistance tends to saturate and represents a lumped resistance (Rno). The contact resistance calculated from dependent of Rs on 1/Isc is consistent with Rno. It is suggested that the non-linear resistance might be resulted from the non-ohmic contact interlayer effect.Taking the non-linear resistance effect, into account dark diode parameters (n, I. are consistent with the measured illumilated nL and IOL, respectively. The calculation of open circuit voltage (Voc) from dark I-V curve has been discussed as well.更多还原