节点文献
并联电阻及光电流随正向电压变化对a-Si:H集成太阳电池填充因子的影响
EFFECT OF PARALLEL RESISTANCE AND PHOTO-CURRENT VERSUS POSITIVE BIASED VOLTAGE ON FILL FACTOR OF INTEGRATED a-Si : H SOLAR CELLS
【摘要】 提出了一种简化的集成太阳电池等效电路,讨论了并联电阻及光电流随正向电压变化对填充因子的影响。并联电阻低或光电流随正向电压变化大的太阳电池,填充因子小。光电流随正向电压变化的大小由i层电荷密度决定。对于实验所用太阳电池,i层电荷密度在2×1015cm-3-3.5×1015cm-3之间。
【Abstract】 In this paper, a simplified equivalent circuit for integrated a-Si:H solar cells is proposed. The effect of parallel resistance and photo-current versus positive biased voltage on fill factor is studied. It is shown that the fill factor reduces with the reduction of parallel resistance or the increasing change of photo-current. The dependence of photo-current on positive biased voltage is determined by effective space charge density of i layer. The charge density of i layer is 2×1015-3.5×1015cm-3 for experimental solar cells.
- 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,1990年02期
- 【被引频次】4
- 【下载频次】115