【摘要】 在多晶硅片背面进行激光辐射损伤,随后进行退火处理,使体内杂质在背表面富集,用化学腐蚀方法将背表面损伤层腐蚀后,进行电池制作,可改善电池特性。 研究了退火时间和退火温度对电池性能的影响,实验得到最佳的退火温度为1000℃,退火时间为1小时。在最佳条件下进行退火处理的电池可使转换效率增加18％。 中子活化分析表明,经处理的多晶硅片中杂质含量明显下降。 用曲线拟合法,由太阳电池光谱响应计算了电池少数载流子扩散长度。经最佳退火条件处理的电池,其少数载流子扩散长度由5.5μm增加至20.1μm。更多还原

【Abstract】 In this paper, a damage-gettering is discribed which reduces the impurity content in bulk of polycrystalline silicon wafer.Damage-gettering was performed by preparing a laser radiation damage layer on the polycrystalline silicon wafer back surface and subsequent annealing in N2 ambient. After the annealing was completed, the wafer was chemical-polished to remove surface damage layer. Solar cell was fabricated from this wafer to improve cell performance.The influences of annealing time and temperature on performance of solar cell was studied in detail. The result of experment shows that the optimun annealing temperature and time is 1000℃ and 1 hour respectively. Maximum conversion efficiency attained for polycrystalline silicon solar cell is 18 percent.The result of neutron activation analysis indicated that the impurity content of polycrystalline silicon wafer was reduced obviously in annealing process.Minority carrier diffusion length was calculated by curve-fitting the photoreponse data, the minority carrier diffusion length of the cell was found to be increased from 5.5μm to 20.1μm under optimum annealing condition.更多还原