【摘要】 以CW Ar~+激光对非晶硅再结晶得到了SOM(Silicon on Metal)多晶硅新材料。其晶粒大小为10×40μm~2,杂质分布均匀,电学性能大大改善.用这种SOM材料已制备成功在1bar压力范围内灵敏度为6mV/V的性能良好的压力传感器。更多还原

【Abstract】 CW Ar+ laser irradiation was used to recrystallize a-Si film, and the grain was increased to more than 10×40μm2, the concentration profile of impurities became uniform and the electrical properties of SOM were improved significantly. The pressure transducer made of this material has a pressure sensitivity of 6 mV/V at the pressure range of 1 bar.更多还原