【摘要】 用自已设计的MOCVD设备,国产的DMCd和DETe金属有机源,采用变通的多层互扩散工艺生长了HgCdTe/CdTe/GaAs外延片,获得良好的n型HgCdTe外延层。研究了生长速率与温度的关系;组份与DMCd/DETe之比的关系;x值与汞源温度的关系。生长CdTe和HgCdTe外延层的衬底温度分别约为:370℃和420℃。汞源温度约为280℃,汞压约0.02atm。DMCd/DETe随生长x值不同而不同。气流在2.6～3.7cm/s之间。更多还原

【Abstract】 We have grown very excellent n type HgCdTe/CdTe/GaAs epitaxial layers by modified process for interdiffussion of multi-layers using the self-designed MOCVD apparatus and home made metalorganic sources of DMCd and DETe. The relationships of growth rate and temperature, x value and the temperature of Hg source, and x value and the ratio of DMCd/DETe have been also analyzed. The substrates temperature in growing CdTe and HgCdTe by MOCVD is about 370℃ and 420℃ respectively. The temperature of Hg source is about 280℃. The Hg pressure is about 0.02 atm. The ratio DMCd/DETe depends on the x value. The carrier gas flow rate is 2.6～3.7cm/s.更多还原