【摘要】 本文综述MOCVD法生长HgCdTe薄膜晶体技术是生长超品格的需要,介绍了国内外的发展过程及本法的特点。目前在生长HgCdTe外延层方面存在的主要问题是外延层和衬底之间的互扩散和晶格失配。为此,在有机金属源、衬底外延工艺和生长方法上加以改进,因而发展成为:常压(标准)、低压、低温、光致、激光辅助MOCVD和化学束外延(CBE)等六种方法。更多还原

【Abstract】 In this paper the internal and intenational development process and cheracteristic of the MOCVD method are summerized and then stated that technology to be grown film crystal by MOCVD method is the reguirement for growning the extra-lattice. At present the main problems while the HgCdTe epitaxial layers are grown are the interdiffussion and lattice-dismatch between epitaxial layers and substrated. Therefore, the metalorganic sources, substrates, epitial preparation and growing methods have been improved. As a result, the six methods of atomspheric pressure, low pressure, low temperature, photoexitation, laser-assisted MOCVD and CBE have been developed.更多还原