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非晶硅中氟的浓度分布
Concentration depth profiling of fluorine in amorphous-silicon
【摘要】 本文用尖锐共振核反应法测定氟在非晶硅中的深度分布,为检验退卷积方法的适用范围,对能级宽度在1keV以下和1keV以上两种情况,对同一样品进行了测量。结果表明:在1keV以下退卷积方法仍可适用。
【Abstract】 The concentration depth profile of fluorine has been measured with narrow reson-ances of nuclear reactions. In order to find the applicable range of the deconvolution method two kinds of level-widtn with T>1 keV or T<lkeV have been measured for the same sample. The results indicate that the method is still applicable to the level-width below 1 keV.
- 【文献出处】 核技术 ,Nuclear Techniques , 编辑部邮箱 ,1990年02期
- 【被引频次】2
- 【下载频次】11