【摘要】 本文研究了用于制作压阻元件的LPCVD多晶硅薄晶体结构与淀积温度,膜厚及热处理温度的关系。多晶硅薄膜的织构和晶粒度不仅与淀积温度有关,而且与膜厚有着密切的关系,1000℃以上的高温热处理具有增大晶粒度和减小薄膜在淀积过程中形成的晶粒优先取向的作用。更多还原

【Abstract】 The crystal structure of the LPCVD polysilicon films (used as piezoresistive elements) related to the deposition temperature, the film thickness and the heat-treatment temperature is investigated. The texture and the average grain size of the films not only change with the deposition temperature, but also are closely related to the filim thickness. The high temperature heat-treatment above 1000℃ can increase the grain size and decrease the grain prefered orientation formed during the film deposition.更多还原