【摘要】 用能量是100kev,剂量为10¹3cm的Z_n离子,注入到n—GaP单晶衬底所制做的光电探测器,它对波长为380nm～440nm的光具有敏感性。利用俄歇能谱（AES）和x光电子能谱（ESCA）,对注入剖面的杂质分布进行了研究。结果表明,注入的Z_n离子,它的2p₃/2电子的结合能是1021.1ev,比它的标准值低0.4ev,由测试结果给出了这种光电探测器的最大量子效率是34％。更多还原

【Abstract】 Optical sensibility of the photodetector using Zinc ions at energy of 100kev and dose 1013cm-2im-plant into n -Gap substrate, which wavelength from 380nm to 440nm to has been investigated. The implantation section impurity was analysed by means of AES and ESCA.The experiment results show that this acceptor impurity level is formed in GaP energy band with implantation of Zinc ions. AES profiles analysys indicates that the implantation doping section is subject to Gauss distribution. The chemical shift and combination state of Zinc ions implantation to Gap were analyised by X photoelectric energy spectrometry. It was found that 2P3/2 electron of Zn having been implanted into Gap which is 1021. lev combined energy. The value is 0.4ev lower than the standard value. As a result it was found that this kind of photodetector has maximum quantum efficiency更多还原