【摘要】 利用电子束蒸发依次将Pd,Si和Al淀积在掺杂浓度为2×10¹³cm^-3的n型GaAs上,可以得到非合金、低阻的欧姆接触。比接触电阻率约为5×10^-6·cm²。但经过高温（410℃）,长时间热退火后,样品的表面会出现明显不平整,比接触电阻率会明显增加,在Al和Si/Pd之间加入一层Ti作为扩散势垒会使欧姆接触的热稳定性变好。但只有在Al和Ti之间的反应没有完全耗尽Ti时,扩散势垒才起作用。更多还原

【Abstract】 Pd, Si and Al were deposited on n-GaAs with concentration 2×1018cm-3 by electron beam evaporation. Non-alloying and low resistivity (ρc≈5×10-6Ωcm2) ohmic contacts were obtained. After high temperature (410℃), long term annealing, sample surface was not smooth and the specific contact resistivity increased. The thermal stability will be enhanced if a layer of Ti diffusion barrier is added between Al and Si/Pd. However the diffusion barrier can be brought into action only if the reaction Ti and Al is not allowed to consume all the Ti during heat treatment.更多还原