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低温双极器件的研究(Ⅱ)

INVESTIGATION OF LOW TEMPERATURE BIPOLAR TRANSISTORS (Ⅱ)

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【作者】 郑茳魏同立孟江生

【Author】 Zheng Jiang, Wei Tongli, Meng Jiangslieng (Microelectronics Center of Southeast University)

【机构】 东南大学微电子中心东南大学微电子中心 南京南京南京

【摘要】 该文从理论和实验两方面研究了低温下双极晶体管基极电流非理想因子 n 的作用和收集极电流 Ic 与基区杂质浓度 N_B 的关系,结果表明:(1)n 因子具有负温度系数,低温下其值可大于2;(2)I_c 随 N_B 的上升而上升,这与常温理论截然相反。

【Abstract】 In this paper , low temperature characteristics of the nonideal component n of the base current in bipolar transistors are studied and a relation between the collector current Ic and the doping ooncentration in the base NB is presented both theoretically and experimentally. The results indicate that. (1) the nonideal component n has negative temperature coefficient, which will become larger than 2 at low temp-erature; (2) the collector current Ic continues to increase with increasing NB, which is opposite to that at room temperature

  • 【文献出处】 低温与超导 ,Cryogenics and Superconductivity , 编辑部邮箱 ,1990年02期
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