【摘要】 本文从理论和实验二方面研究了硅晶体管电流增益的低温特性,建立了电流增益的温度模型,阐明了电流增益低温下降的机理及其与发射区杂质浓度的新关系,在此基础上探讨了获得具有良好电性能的硅低温晶体管的方法。更多还原

【Abstract】 In this paper, low temperature characteristics of current gain in silicon bipolar transistors is investigated both theoretically and experimentally. We present a temperature model of current gain, and clarify the reason of current gain degradation and the new relations, hip between current gain and the doping concentration in the emitter at low temperature.On the bases, we discuss the method for [obtaining a new transistor with good electrical properties for low temperature operation.更多还原