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多晶硅薄膜晶体管的模拟与分析
Simulation and Analysis of Poly-Silicon Thin Film Transistor
【摘要】 提出了一个晶粒间界的物理模型,以解释多晶硅薄膜晶体管(TFT)的低载流子迁移率和高阈值电压.研制了多晶硅 TFT 的分析软件包TFTNPE,它包括两维数值模拟器和模型参数提取软件,可以用于多晶硅薄膜器件的分析与设计.
【Abstract】 in this paper,a physical model of grain boundaries is presented to explain the low value of carrier mobility and the high value of threshold voltage for poly-silicon thin film transistors (TFT).A software package, called TFTMPE,is developed,which consists of a two dimensional numerical simulator and a model parameter extractor,it can be applied to the analysis and design of poly silicon TFT.
【关键词】 多晶;
硅;
薄膜晶体管;
模拟;
分析;
【Key words】 polycrystal; silicon; thin film transistor simulation; analysis;
【Key words】 polycrystal; silicon; thin film transistor simulation; analysis;
- 【文献出处】 东南大学学报 ,Journal of Southeast University , 编辑部邮箱 ,1990年04期
- 【被引频次】2
- 【下载频次】117