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α-Si:H多层膜切面电镜观察分析
THE OBSERVATION AND ANALYSIS OF α-Si:HMULTILAYER FILMS SECTIONS BY SEM
【摘要】 本文制备了六种不同结构的 α-Si:H 多层膜结构,对其切面进行了扫描电镜观察分析.结果表明:辉光法生长 α-Si:H 膜过程中存在沉积和刻蚀一对对抗性矛盾,在常规工艺下各层界面不明显存在,在特殊条件下,可能生长出尺度不同的微晶镶嵌在非晶网络中。
【Abstract】 In this paper six kinds of a-Si:Ⅱ multilayer film structures are fabri-cated.Their sections are observced and analyzed by Scanning Electron Microscope(SEM).The results show that there exists a antagonistic contradiction of deposition andetching in the process of glowing a—Si:H films by glow discharge.By the common technolo-gy,the interfaces among every layer don’t exist obviouslu On the special conditions,it ispossible to form crystallites and to get into amorphous network.
【关键词】 氢化非晶硅;
多层膜;
扫描电镜;
界面;
微晶;
【Key words】 amorphous hydrogenated silicon; multilayer films; scanning electron microscope(SEM); crystallite;
【Key words】 amorphous hydrogenated silicon; multilayer films; scanning electron microscope(SEM); crystallite;
- 【文献出处】 电子科技大学学报 ,Journal of University of Electronic Science and Technology of China , 编辑部邮箱 ,1990年01期
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