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氧化钽感湿薄膜的研究

A Study of Tantalum Oxide Humidity Sensitive Thin Films

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【作者】 陈国平李玲珍张随新张浩康

【Author】 Chen Guoping Li Lingzhen Zhang Suixin (Southeast University)

【机构】 东南大学东南大学

【摘要】 在Ar-O2混合气氛中采用直流磁控反应溅射沉积制得了氧化钽薄膜.文章介绍了沉积薄膜的实验装置与工艺,叙述了反应溅射的过程与机理.用AES、XPS和X射线衍射研究了薄膜的成分与结晶结构,用Ta2O5薄膜研制成Si-MOS薄膜湿敏器件.测试结果表明:这种新的湿敏器件具有高的灵敏度和非常快的响应速度.

【Abstract】 Tantalum oxide thin films were deposited by reactive DC magnetron Sputtering from a tantalum target in Ar-O2 mixture. Experimental apparatus and procedures for deposition of thin films ars described.The reactive sputtering processes and mechanism are given. Composition and crystalline structures of thin films were investigated by AES,XPS,and X-ray diffraction. The authos have developed Si-MOS thin film humidity sensitive devices using Ta2O5 thin film. Measurement results have shown that the new ices exhibits high sensitity and very fast humidity response speed.

  • 【文献出处】 传感技术学报 ,Journal of Transcluction Technology , 编辑部邮箱 ,1990年01期
  • 【被引频次】2
  • 【下载频次】45
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