【摘要】 研究了 Si~+和 S~+注入 SI-GaAs 经白光瞬态退火后的电特性,得出最佳的退火条件为930～960℃,5s.在适当的注入和退火条件下,得到了陡峭的载流子剖面分布没有拖长的尾巴.发现Si~+注入白光快速退火样品比常规热退火样品有较好的电特性.使用 Si~+注入白光快速退火制作出了性能良好的全离子注入平面型 MESFET.更多还原

【Abstract】 The electrical characteristics of ²⁹Si⁺ and ³⁴S⁺ implanted GaAs are measured after light rapid thermal annealing（RTA）for durations of 2～10s at temperatures between 800～1000℃.Optimal conditions are 5s at 960℃ in N₂ atmosphere The carrier concentration profiles of ³⁴S⁺ and ²⁹Si⁺ implanted samples are abrupt for optimal annealing conditions.The RTA is more aeva- ntageous than convertional furnace annealing.High guality MESFET of full ion implantetion are fabricated.更多还原