【摘要】 本文从理论上分析了薄膜SOI结构中反型层厚度与薄膜厚度的关系。为设计薄膜MOS/SOI器件引进了一个新的参数──薄膜整体反型临界厚度。分析认为,为使超薄膜MOS/SOI器件高速和高功率工作,有必要使薄膜厚度接近整体强反型临界厚度。更多还原

【Abstract】 The dependence of inversion layer thickness on film thickness in thin-film SOI structureis analysed theoretically by using computer simulation. A new concept and parameter, the criticalthickness of thin film all-bulk inversion, are introduced for the design of thin-film MOS)SOI devices. It is necessary to select the film thickness near to the all-bulk strong inversion criticalthicknesss in order to get high speed and high power working of ultrathin film MOS/SOIdevices.更多还原