【摘要】 利用四探针、AES、XRD、XPS和SEM等技术研究了快速热退火中Co与Si和SiO₂反应动力学、相序、层的形貌。测量了薄层电阻与退火温度和时间的关系。结果表明,随退火温度的升高,淀积在硅衬底上的钴膜逐步转变为Co₂Si、CoSi_?最后完全转化为CoSi₂。CoSi₂对应的电阻率最低。Co与SiO₂不会反应,即使在1050℃的高温下也没有观察到任何形成钴硅化物的证据。更多还原

【Abstract】 The interaction of Co with Si and SiO₂ during RTA has been investigated. Phase sequence,layer morphology and reaction kinetics are studied through sheet resistance, X-ray diffraction,Auger electron spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscopy.With increasing annealing temperature Co film on Si（100） is transformed into Co₂Si,CoSi and finally CoSi₂ which corresponds to the minimum in sheet resistance. No evidence ofsilicide formation is observed during Co/SiO₂ annealing even at high temperature of 1050℃.更多还原