【摘要】 本文利用液相外延方法,在较大组分范围内（0≤x≤0.17,0≤y≤0.12）,成功地生长出了晶格匹配于（100）GaSb衬底的In_xGa_1-xAs_ySb_1-x四元材料,并对其性质进行了实验观察和研究。结果表明,这种表面光亮、层厚均匀、异质结界面平直以及纯度较高、完整性好的外延薄膜是制作超长波长光电器件的理想材料。更多还原

【Abstract】 In_xGa_1-xAs_ySb_1-yepitaxial layers lattice matched to （100） GaSb substrates have been successfullygrown in a composition range （0<x<0.17, 0<y<0.12） by LPE technique. Doublecrystal X-ray diffraction measurements show that the minimum lattice mismatch, <2×10^-4,can be reached if the liquid compositions are carefully designed.The 80 K cathode-luminescencespectra on these epitaxial layers indicate that the bandgap energy range is from 0.733 eV0.635 eV, and the longest peak wavelength of 1.95μm has been reached with the maximumsolid composition x=0.17, y=0.12. Infrared absorption spectrum of this epilayer shows anemission wavelength of 2.18μm at room temperature.更多还原