【摘要】 对SiGe/GaP合金进行的退火研究发现,当这种合金经受了高温-低温-高温三步骤退火后,材料的温差电功率因子(α~2σ)得到了进一步的改善。更多还原

【Abstract】 A three-step heat treatment has been employed o improve the thermoelectric properties ofSiGe/GaP alloys. It is found that the power facters (α~2σ) of the alloys have been increasedfurther compared to that obtained by a single high tenperature heat treatment.This indicatesthat other mechanisms or agencies besides an increased dopant solubility are also responsible forthe improvement in thermoelectric performance of this materials.更多还原