【摘要】 本文主要研究了超薄快速热氮化（Rapid Thermal Nitridation）SiO₂膜在高电场下的电特性和抗辐照特性,采用AES和XPS等技术分析了RTN SiO₂膜的成份和结构。与同厚SiO₂膜相比,RTN SiO₂膜具有许多明显的优点,在同样条件下,当电场强度E≈1.5×10⁷V/cm时,击穿时间t_bd比SiO₂的约高两个量级;在经过剂量高达10⁷rad的Co⁶⁰辐照后,SiO₂膜的界面态密度及漏电流均增大1—2个量级,而RTN SiO₂膜的变化非常小。更多还原

【Abstract】 The characteristics of the ultra-thin （10nm） Rapid Thermal Nitrided SiO₂ films underhigh electric field stress are studied.The composition and structure of RTN SiO₂ film havebeen analysed by means of AES and XPS.A new technique to obtain the ultra-thin RTNSiO₂ films with high quality is presented.The RTN SiO₂ films have many advantages in comparisonwith the SiO₂ films of the same thickness.The breakdown time t_hd of the film at thehigh electric field of 1.5×10⁷ V/cm is about two orders of magnitude higher than that ofSiO₂, which are stressed under the same conditions. With conventional SiO₂ film, the irradiationof Co⁶⁰ upto 10⁶ and 10⁷ rad increases the interface state density and leakage current by1-2 orders of magnitude, while with the RTN SiO₂ films the changes are very small.更多还原