【摘要】 本文使用IERS（干涉增强喇曼散射）,TEM和SIMS等方法研究了Pd/a-Si:H界面反应的热退火行为,发现Pd/a-Si:H界面在室温下形成非晶互混层;经160℃退火,形成晶态Pd₂Si相,比Pd/c-Si界面反应温度低;经500℃退火,未与Pd反应的非晶硅出现晶化现象。本文还观察了界面反应过程中氢的行为,发现由于界面反应,导致a-Si:H中的氢在较低温度下就开始释放。更多还原

【Abstract】 By means of IERS, TEM, SIMS and other methods, the interfacial reaction of Pd/a-Si:H at different annealing temperatures is investigated,and the crystallization of a-Si:H andthe behaviour of hydrogen during the Pd/a-Si:H interfacial reaction is analysed. It is foundthat the intermixing layer in the interface was formed at room temperature. The reactiontemperature for Pd/a-Si:H interface is about 160℃ lower than that for Pd/c-Si interface.After annealing at 500℃, the a-Si:H in Pd/a-Si:H interface was crystallized by metal-inducedaction.During the reaction of Pd/a-Si:H interface, the hydrogen evolution in a-Si:H was alsoobserved.更多还原