【摘要】 用离子束混合Si（700A）/C样品,在天然Ⅱb型金刚石上形成了梯度能带接触。选用Ge⁺为注入离子,在能量120keV,剂量2.0×10¹⁶cm^-2,温度700℃下进行离子束混合。Rutherford背散射显示:有3—4％的Si与金刚石混合。红外吸收谱发现了Si—C键的形成,这表明形成了Si/SiC/C的梯度结构。Ⅰ—Ⅴ特性说明了离子束混合和高温热退火有助于欧姆接触的形成。而没有经过离子束混合的样品显示了Ⅰ—Ⅴ开路特性。更多还原

【Abstract】 Graded band-gap contacts to natural type IIb diamond were formed by ion beam mixingof Si（700A）/Diamond samples.Ion mixing was ca（?）ried out using 120 keV Ge⁺ ions at a doseof 2×10¹⁶cm^-2 at temperature of 700℃. Rutherford backscattering spectra show that about3 to 4 percent of the Si layer was mixed into the diamond. Si-C bonds were observed byinfrared absorption measurements, indicating the formation of a Si/SiC/Diamond graded structure.Ⅰ-Ⅴ characteristics show that well behaved ohmic contacts can be formed by ion mixingwith a subsequent thermal annealing.Samples w（?）thout ion mixing show open circuit behavior.更多还原